2SA1013_15 datasheet(2/3 Pages) UTC

部品番号	2SA1013

部品情報	PNP EPITAXIAL SILICON TRANSISTOR

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メーカー	UTC [Unisonic Technologies]

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2SA1013

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R208-049.D



ABSOLUTE MAXIMUM RATINGS (T

A=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-160

V

Collector-Emitter Voltage

VCEO

-160

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current

IC

-1

A

Base Current

IB

-0.5

A

Collector Power Dissipation

SOT-89

PC

500

W

TO-92/TO-92NL

900

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Cut-Off Current

ICBO

VCB=-150V, IE=0

-1.0

µA

Emitter Cut-Off Current

IEBO

VEB=-6V, IC=0

-1.0

µA

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-10mA, IB=0

-160

V

DC Current Gain

hFE

VCE=-5V, IC=-200mA

60

320

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-1.5

V

Base-Emitter Voltage

VBE

VCE=-5V, IC=-5mA

-0.45

-0.75

V

Transition Frequency

fT

VCE=-5V, IC=-200mA

15

50

MHz

Collector Output Capacitance

Cob

VCB=-10V, f=1MHz, IE=0

35

pF



CLASSIFICATION OF hFE

RANK

R

O

P

RANGE

60~120

100~200

160~320

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