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ISL9V3040D3SG-TQ2-T データシート(PDF) 2 Page - Unisonic Technologies |
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ISL9V3040D3SG-TQ2-T データシート(HTML) 2 Page - Unisonic Technologies |
2 / 4 page ISL9V3040D3S Insulated Gate Bipolar Transistor UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R219-011.F ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector to Emitter Breakdown Voltage BVCER 450 V Emitter to Collector Voltage Reverse Battery Condition BVECS 30 V TJ=25°C, ISCIS=14.2A, L=3.0mHy 300 mJ At Starting TJ= 150°C, ISCIS=10.6A, L=3.0mHy ESCIS 170 mJ TC=25°C 21 A Continuous Collector Current TC=110°C IC 17 A Gate to Emitter Voltage Continuous VGEM ±10 V TO-220/TO-263 125 TO-220F 41.6 Power Dissipation Total at TC=25°C TO-252 125 W TO-220/TO-263 1 TO-220F 0.332 Power Dissipation Derating TC>25°C TO-252 PD 1 W/°C Electrostatic Discharge Voltage at 100pF, 1500Ω ESD 4 kV Junction Temperature TJ -40~175 °C Storage Temperature Range TSTG -40~175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT TO-220/TO-252 TO-263 1.0 Junction to Case TO-220F θJC 3.0 °C/W |
同様の部品番号 - ISL9V3040D3SG-TQ2-T |
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同様の説明 - ISL9V3040D3SG-TQ2-T |
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