データシートサーチシステム |
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LM109JAN データシート(PDF) 3 Page - Texas Instruments |
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LM109JAN データシート(HTML) 3 Page - Texas Instruments |
3 / 13 page OBSOLETE LM109JAN www.ti.com SNVS379B – NOVEMBER 2005 – REVISED MARCH 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) Input Voltage 35V Power Dissipation Internally Limited Operating Ambient Temperature Range −55°C ≤ TA ≤ +150°C Storage Temperature Range −65°C ≤ TA ≤ +150°C Maximum Junction Temperature 150°C Thermal Resistance θJA NDT0003A-Pkg (Still Air) 190°C/W NDT0003A-Pkg (500LF/Min Air flow) 69°C/W K0002C-Pkg (Still Air) 39°C/W K0002C-Pkg (500LF/Min Air flow) TBD θJC NDT0003A-Pkg 25°C/W K0002C-Pkg 3°C/W Lead Temperature (Soldering, 10 sec.) 300°C ESD Tolerance (2) 4000V (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. (2) Human body model, 1.5k Ω in series with 100PF. Quality Conformance Inspection Mil-Std-883, Method 5005 - Group A Subgroup Description Temp °C 1 Static tests at 25 2 Static tests at 125 3 Static tests at -55 4 Dynamic tests at 25 5 Dynamic tests at 125 6 Dynamic tests at -55 7 Functional tests at 25 8A Functional tests at 125 8B Functional tests at -55 9 Switching tests at 25 10 Switching tests at 125 11 Switching tests at -55 12 Settling time at 25 13 Settling time at 125 14 Settling time at -55 Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 |
同様の部品番号 - LM109JAN_15 |
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同様の説明 - LM109JAN_15 |
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