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UF1010EG-TF2-T データシート(PDF) 2 Page - Unisonic Technologies |
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UF1010EG-TF2-T データシート(HTML) 2 Page - Unisonic Technologies |
2 / 5 page UF1010E Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-306.D ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Source Voltage VGSS ±20 V Drain Current Continuous (VGS=10V) ID 84 A Pulsed (Note 2) IDM 330 Avalanche Current (Note 2) IAR 50 A Avalanche Energy Repetitive (Note 2) EAR 17 mJ Single Pulsed (Note3) EAS 1180 mJ Power Dissipation (TC=25°C) TO-220/TO-263 PD 200 W TO-220F1/ TO-220F2 54 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. 2. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX) TJ=25°C, L=260μH, RG=25Ω, IAS=50A THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-263 θJA 62 °C/W TO-220F1/ TO-220F2 62.5 Junction to Case TO-220/TO-263 θJc 0.75 °C/W TO-220F1/ TO-220F2 2.3 |
同様の部品番号 - UF1010EG-TF2-T |
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同様の説明 - UF1010EG-TF2-T |
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