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6N90ZG-TQ2-T データシート(PDF) 2 Page - Unisonic Technologies

部品番号 6N90ZG-TQ2-T
部品情報  N-CHANNEL POWER MOSFET
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N90ZG-TQ2-T データシート(HTML) 2 Page - Unisonic Technologies

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6N90Z
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-953.b
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (TC=25°C)
ID
6.2
A
Pulsed (Note 2)
IDM
24
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
300
mJ
Repetitive (Note 2)
EAR
16.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
125
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 16.6mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
1
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
900
V
Breakdown Voltage Temperature Coefficient △BVDSS
/TJ Reference to 25°C, ID=250µA
1.07
V/°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
10
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+5
µA
Reverse
VGS=-20V, VDS=0V
-5
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3.1A
1.72 2.3
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
1270 1770 pF
Output Capacitance
COSS
110 145
pF
Reverse Transfer Capacitance
CRSS
15
25
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
45
55
nC
Gate to Source Charge
QGS
5
nC
Gate to Drain Charge
QGD
13
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=1A, RG=25Ω
(Note 1, 2)
80
110
ns
Rise Time
tR
100 150
ns
Turn-OFF Delay Time
tD(OFF)
210 250
ns
Fall-Time
tF
125 145
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
6.2
A
Maximum Body-Diode Pulsed Current
ISM
24.8
A
Drain-Source Diode Forward Voltage
VSD
IS=6.2A, VGS=0V
1.4
V
Body Diode Reverse Recovery Time
tRR
IS=6.2A, VGS=0V, dIF/dt=100A/µs
(Note 1)
630
ns
Body Diode Reverse Recovery Charge
QRR
6.9
µC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature


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