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6N90ZG-TQ2-T データシート(PDF) 2 Page - Unisonic Technologies |
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6N90ZG-TQ2-T データシート(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 6N90Z Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-953.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous (TC=25°C) ID 6.2 A Pulsed (Note 2) IDM 24 A Avalanche Energy Single Pulsed (Note 3) EAS 300 mJ Repetitive (Note 2) EAR 16.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 16.6mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 1 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 900 V Breakdown Voltage Temperature Coefficient △BVDSS △ /TJ Reference to 25°C, ID=250µA 1.07 V/°C Drain-Source Leakage Current IDSS VDS=900V, VGS=0V 10 µA Gate- Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +5 µA Reverse VGS=-20V, VDS=0V -5 µA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.1A 1.72 2.3 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 1270 1770 pF Output Capacitance COSS 110 145 pF Reverse Transfer Capacitance CRSS 15 25 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) 45 55 nC Gate to Source Charge QGS 5 nC Gate to Drain Charge QGD 13 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=1A, RG=25Ω (Note 1, 2) 80 110 ns Rise Time tR 100 150 ns Turn-OFF Delay Time tD(OFF) 210 250 ns Fall-Time tF 125 145 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 6.2 A Maximum Body-Diode Pulsed Current ISM 24.8 A Drain-Source Diode Forward Voltage VSD IS=6.2A, VGS=0V 1.4 V Body Diode Reverse Recovery Time tRR IS=6.2A, VGS=0V, dIF/dt=100A/µs (Note 1) 630 ns Body Diode Reverse Recovery Charge QRR 6.9 µC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
同様の部品番号 - 6N90ZG-TQ2-T |
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同様の説明 - 6N90ZG-TQ2-T |
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