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BTB24AG-6-BW-TA3-T データシート(PDF) 2 Page - Unisonic Technologies |
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BTB24AG-6-BW-TA3-T データシート(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BTB24A Preliminary TRIAC UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R401-060.b ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT RMS On-State Current (Full Sine Wave) TC=75°C IT(RMS) 25 A Non Repetitive Surge Peak On-State Current (Full Cycle, TJ initial=25°C) F=50 Hz t=20ms ITSM 250 A F=60 Hz t=16.7ms 260 A I 2t Value for Fusing tP=10ms I 2t 340 A 2s Critical Rate of Rise of On-State Current IG=2xIGT, tr≤100ns F=120 Hz TJ=125°C dI/dt 50 A/µs Non Repetitive Surge Peak Off-State Voltage tP=10ms TJ=25°C VDSM/VRSM VDRM/VRRM+100 V Peak Gate Current tP=20µs TJ=125°C IGM 4 A Average Gate Power Dissipation TJ=125°C PG(AV) 1 W Operating Junction Temperature TJ -40~+125 °C Storage Junction Temperature TSTG -40~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 60 °C/W Junction to Case (AC) θJC 0.8 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS CW BW UNIT MIN TYP MAX MIN TYP MAX SNUBBERLESS TYPE (3 QUADRANTS) Gate Trigger Current (Note 1) IGT VD=12V, RL=33Ω I-II-III 35 50 mA Gate Trigger Voltage VGT I-II-III 1.3 1.3 V Gate Non-Trigger Voltage VGD VD=VDRM, RL=3.3kΩ, TJ=125°C I-II-III 0.2 0.2 V Holding Current (Note 2) IH IT=500mA 50 75 mA Latching Current IL IG=1.2IGT I-III 70 80 mA II 80 100 mA Critical Rate of Rise of Off-State Voltage (Note 2) dV/dt VD=67%VDRM, Gate Open, TJ=125°C 500 1000 V/µs Critical Rate of Rise of Off-State Voltage at Commutation (Note 2) (dI/dt)c Without Snubber, TJ=125°C 13 22 A/ms STATIC CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Peak On-State Voltage (Note 2) VTM ITM=35A, tP=380μs TJ=25°C 1.55 V Threshold Voltage (Note 2) VTO TJ=125°C 0.85 V Dynamic Resistance (Note 2) RD TJ=125°C 16 mΩ Repetitive Peak Off-State Current IDRM VDRM=VRRM TJ=25°C 5 μA IRRM TJ=125°C 3 mA Notes: 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of MT2 referenced to MT1. |
同様の部品番号 - BTB24AG-6-BW-TA3-T |
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同様の説明 - BTB24AG-6-BW-TA3-T |
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