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SI1330EDL データシート(PDF) 3 Page - Vishay Telefunken |
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SI1330EDL データシート(HTML) 3 Page - Vishay Telefunken |
3 / 9 page Document Number: 72861 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 3 Vishay Siliconix Si1330EDL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 ID - Drain Current (mA) VGS = 4.5 V VGS = 10 V 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 10 V at 250 mA VGS = 4.5 V at 200 mA 0 1 2 3 4 5 02468 10 VGS - Gate-to-Source Voltage (V) ID = 200 mA Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage Variance over Temperature 0 1 2 3 4 5 6 7 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VDS = 10 V ID = 250 mA Qg - Total Gate Charge (nC) 1.2 1.5 1 100 1000 0 0.3 0.6 0.9 TJ = 25 °C TJ = 125 °C VSD - Source-to-Drain Voltage (V) 10 TJ = - 55 °C VGS = 0 V - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) |
同様の部品番号 - SI1330EDL |
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同様の説明 - SI1330EDL |
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