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LM10010 データシート(PDF) 3 Page - Texas Instruments |
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LM10010 データシート(HTML) 3 Page - Texas Instruments |
3 / 17 page LM10010 www.ti.com SNVS717C – JULY 2011 – REVISED MARCH 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) VDD, EN, IDAC_OUT -0.3V to 6V VIDA, VIDB, VIDC, VIDS -0.3V to 6V ESD Rating(3) Human Body Model 2 kV Storage Temperature -65°C to +150°C Junction Temperature +150°C (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and conditions, see the Electrical Characteristics. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. (3) The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. Operating Ratings VDD 3.0V to 5.5V IDAC_OUT -0.3V to VDD-1.75V VIDA, VIDB, VIDC, VIDS -0.3V to 5.5V EN -0.3V to 5.5V Junction Temperature −40°C to +125°C Ambient Temperature −40°C to +125°C WSON-10 Thermal Resistance ( θJA) (1) 40°C/W (1) Junction to ambient thermal resistance is highly application and board layout dependent. Specified thermal resistance values for the package specified is based on a 4-layer, 4"x3", 2/1/1/2 oz. Cu board as per JEDEC standards is used. Electrical Characteristics Limits in standard type are for TJ = 25°C only. Limits appearing in boldface type apply over the full operating junction temperature range (-40°C < TJ < +125°C). Unless otherwise noted, specifications apply to the Typical Application Circuit. See (1). Symbol Parameter Conditions Min. Typ. Max. Units Supply, UVLO, and Enable IQ Quiescent current VDD=5.0V, VEN=2.0V 250 280 µA VDD=5.0V, VEN=2.0V, IFS 340 µA VDD=5.0V, VEN=0.0V 45 70 µA UVLO Under voltage rising threshold 2.65 2.95 V Under voltage falling threshold 2.2 2.45 V Hysteresis 100 200 300 mV VEN Enable rising threshold 1.20 1.34 1.45 V Enable hysteresis 50 100 180 mV IEN Enable pullup current 2 µA IDAC ACC Accuracy Measured at full scale 2 -2 % LSB DAC step size IFS /(2 6-1) 940 nA Default Output code At startup 46d Code Output current At startup 16 µA IFS Full-scale output current VID[5:0] = 000000b 59.2 µA INL Integral non-linearity -1 0.15 1 LSB (1) All limits are ensured. All electrical characteristics having room temperature limits are tested during production at TA = 25°C. All hot and cold limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control. Copyright © 2011–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM10010 |
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