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MSAFA1N100D データシート(PDF) 2 Page - Microsemi Corporation

部品番号 MSAFA1N100D
部品情報  Fast MOSFET Die for Implantable Cardio Defibrillator Applications
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メーカー  MICROSEMI [Microsemi Corporation]
ホームページ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MSAFA1N100D データシート(HTML) 2 Page - Microsemi Corporation

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MSC1054.PDF 6/23/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified
MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
DYNAMIC CHARACTERISTICS:
¬ Repetitive Rating: Pulse width limited by maximum junction temperature.
- I
C = IC2, VCC = 50V, RCE = 25
Ω , L = 300µ
µH, T
J = 25
°°C
® T
J = 150
°°C
¯ See MIL-STD-750 Method 3471
DIE PROBE PARAMETERS (100% TESTS):
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Ciss
Input Capacitance
VGS = 0V
290
350
pF
Coss
Output Capacitance
VDS = 25V
36
45
pF
Crss
Reverse Transfer Capacitance
f = 1 MHz
15
25
pF
Qg
Total Gate Charge
¯
¯
VGS = 10V
20
nC
Qgs
Gate-Source Charge
VDS = 0.5BVDSS
1
nC
Qgd
Gate-Drain ("Miller") Charge
IC = 20 mA
10
nC
td (on)
Turn-on Delay Time
Resistive Switching (25
°°C)
6.3
ns
tr
Rise Time
VGS = 10V, VDS = 0.5BVDSS
5.9
ns
td (off)
Turn-off Delay Time
ID = 20 mA
315
ns
tf
Fall Time
Rg = 1.6Ω
2.6
us
td (on)
Turn-On Delay Time
Resistive Switching (25
°°C)
6.3
ns
tr
Rise Time
VGS = 10V, VDS = 0.5BVDSS
5.8
ns
td (off)
Turn-off Delay Time
ID = 100 mA
76
ns
tf
Fall Time
Rg = 1.6Ω
470
ns
VSD
Diode Forward Voltage
VGS =0 V, IS = 1 A
1
V
trr
Reverse Recovery Time
IS = 1 A, d IS / dt = 100 A/us
130
ns
Qrr
Reverse Recovery Charge
IS = 1 A, d IS / dt = 100 A/us
.7
uC
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, IC = 0.25mA)
1000
Volts
VGS(TH)
Gate Threshold Voltage (VDS = VGS, IC = 1000µ
µ A, T
J = 25 °
°C
2
4.5
RDS (ON)
Drain-Source On-Resistance (VGS = 10V, IC = 1 A, TJ = 25°°C)
14
ohm
IDSS
Zero Gate Voltage Drain Current (VDS = 800 V, VGS = 0V, TJ = 25°°C)
25
uA
IGSS
Gate-Source Leakage Current (VGS = ±20 V, VDS =0V)
±100
nA


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