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MSAFA1N100D データシート(PDF) 2 Page - Microsemi Corporation |
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MSAFA1N100D データシート(HTML) 2 Page - Microsemi Corporation |
2 / 3 page MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator Applications DYNAMIC CHARACTERISTICS: ¬ Repetitive Rating: Pulse width limited by maximum junction temperature. - I C = IC2, VCC = 50V, RCE = 25 Ω Ω , L = 300µ µH, T J = 25 °°C ® T J = 150 °°C ¯ See MIL-STD-750 Method 3471 DIE PROBE PARAMETERS (100% TESTS): SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNIT Ciss Input Capacitance VGS = 0V 290 350 pF Coss Output Capacitance VDS = 25V 36 45 pF Crss Reverse Transfer Capacitance f = 1 MHz 15 25 pF Qg Total Gate Charge ¯ ¯ VGS = 10V 20 nC Qgs Gate-Source Charge VDS = 0.5BVDSS 1 nC Qgd Gate-Drain ("Miller") Charge IC = 20 mA 10 nC td (on) Turn-on Delay Time Resistive Switching (25 °°C) 6.3 ns tr Rise Time VGS = 10V, VDS = 0.5BVDSS 5.9 ns td (off) Turn-off Delay Time ID = 20 mA 315 ns tf Fall Time Rg = 1.6Ω Ω 2.6 us td (on) Turn-On Delay Time Resistive Switching (25 °°C) 6.3 ns tr Rise Time VGS = 10V, VDS = 0.5BVDSS 5.8 ns td (off) Turn-off Delay Time ID = 100 mA 76 ns tf Fall Time Rg = 1.6Ω Ω 470 ns VSD Diode Forward Voltage VGS =0 V, IS = 1 A 1 V trr Reverse Recovery Time IS = 1 A, d IS / dt = 100 A/us 130 ns Qrr Reverse Recovery Charge IS = 1 A, d IS / dt = 100 A/us .7 uC SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage (VGS = 0V, IC = 0.25mA) 1000 Volts VGS(TH) Gate Threshold Voltage (VDS = VGS, IC = 1000µ µ A, T J = 25 ° °C 2 4.5 RDS (ON) Drain-Source On-Resistance (VGS = 10V, IC = 1 A, TJ = 25°°C) 14 ohm IDSS Zero Gate Voltage Drain Current (VDS = 800 V, VGS = 0V, TJ = 25°°C) 25 uA IGSS Gate-Source Leakage Current (VGS = ±20 V, VDS =0V) ±100 nA |
同様の部品番号 - MSAFA1N100D |
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同様の説明 - MSAFA1N100D |
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