ACE1511A datasheet(2/7 Pages) ACE

部品番号	ACE1511A

部品情報	P-Channel Enhancement Mode MOSFET

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE1511A

P-Channel Enhancement Mode MOSFET

VER 1.1

2

Packaging Type

SOT-723

3

1

2

PIN DESCRIPTION

Symbol

Description

1

G

Gate

2

S

Source

3

D

Drain

Ordering information

ACE1511A XX + H

Electrical Characteristics

TA=25℃, unless otherwise noted.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=-250 uA

-20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.35

-0.8

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±30

uA

Zero Gate Voltage Drain

Current

IDSS

VDS=-20V, VGS=0V

-1

uA

VDS=-20V, VGS=0V, TJ=55℃

-5

On-State Drain Current

ID(on)

VDS

≤ -4.5V,V

GS =-5V

-0.7

A

Drain-Source

On-Resistance

RDS(ON)

VGS=-4.5V, ID=-0.45A

0.42

0.52

Ω

VGS=-2.5V, ID=-0.35A

0.58

0.70

VGS=-1.8V, ID=-0.25A

0.75

0.95

JM : SOT-723

Pb - free

Halogen - free

D1

S1

G1

S

G

D

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