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ACE9006M データシート(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE9006M データシート(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE9006M N-Channel 60-V (D-S) MOSFET VER 1.1 1 Description ACE9006M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Absolute Maximum Ratings (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current a TC=25°C ID 90 A Pulsed Drain Current b IDM 240 Continuous Source Current (Diode Conduction) a IS 90 A Power Dissipation a TC=25°C PD 300 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction-to-Ambient RθJA 62.5 °C/W Maximum Junction-to-Case RθJC 0.5 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature |
同様の部品番号 - ACE9006M |
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同様の説明 - ACE9006M |
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