ACE9006M datasheet(1/7 Pages) ACE

部品番号	ACE9006M

部品情報	N-Channel 60-V (D-S) MOSFET

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE9006M

N-Channel 60-V (D-S) MOSFET

VER 1.1

1

Description

ACE9006M uses advanced trench technology to provide excellent RDS(ON).

This device particularly suits for low voltage application such as power management of desktop

computer or notebook computer power management, DC/DC converter.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

(TA = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

Continuous Drain Current

a

TC=25°C

ID

90

A

Pulsed Drain Current

b

IDM

240

Continuous Source Current (Diode Conduction)

a

IS

90

A

Power Dissipation

a

TC=25°C

PD

300

W

Operating Junction and Storage Temperature Range TJ, Tstg

-55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Unit

Maximum Junction-to-Ambient

RθJA

62.5

°C/W

Maximum Junction-to-Case

RθJC

0.5

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

同様の部品番号 - ACE9006M

メーカー	部品番号	データシート	部品情報
ACE Technology Co., LTD...	ACE9006M03N	718Kb / 7P	N-Channel 60-V MOSFET VER 1.1
ACE Technology Co., LTD...	ACE9006M06P	712Kb / 7P	P-Channel 60-V MOSFET VER 1.1

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