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MTB110P08KN3 データシート(PDF) 2 Page - Cystech Electonics Corp. |
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MTB110P08KN3 データシート(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 2/9 MTB110P08KN3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDS -80 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TA=25 °C , VGS=-10V (Note 3) -2.2 Continuous Drain Current @ TA=70 °C, VGS=-10V (Note 3) ID -1.8 Pulsed Drain Current (Notes 1, 2) IDM -20 A PD 1.38 W Maximum Power Dissipation (Note 3) Linear Derating Factor 0.01 W/ °C Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on minimum copper pad Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 90 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25 °C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -80 - - V VGS=0V, ID=-250μA ∆BVDSS/∆Tj - 0.08 - V/ °C Reference to 25 °C, ID=-250μA VGS(th) -1.0 - -2.5 V VDS=VGS, ID=-250μA IGSS - - ± 10 VGS=±20V, VDS=0V - - -1 VDS=-80V, VGS=0V IDSS - - -10 μA VDS=-64V, VGS=0V (Tj=70°C) - 104 135 ID=-2A, VGS=-10V *RDS(ON) - 141 185 m Ω ID=-1A, VGS=-4.5V *GFS - 5.2 - S VDS=-10V, ID=-2A Dynamic Ciss - 537 - Coss - 52 - Crss - 37 - pF VDS=-30V, VGS=0V, f=1MHz td(ON) - 7.4 - tr - 17.4 - td(OFF) - 36 - tf - 24.8 - ns VDS=-40V, ID=-1A, VGS=-10V RG=10Ω |
同様の部品番号 - MTB110P08KN3 |
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同様の説明 - MTB110P08KN3 |
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