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MTB110P08KN3 データシート(PDF) 2 Page - Cystech Electonics Corp.

部品番号 MTB110P08KN3
部品情報  -80V P-Channel Enhancement Mode MOSFET
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メーカー  CYSTEKEC [Cystech Electonics Corp.]
ホームページ  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB110P08KN3 データシート(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C123N3
Issued Date : 2015.11.09
Revised Date :
Page No. : 2/9
MTB110P08KN3
CYStek Product Specification
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-80
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TA=25
°C , VGS=-10V (Note 3)
-2.2
Continuous Drain Current @ TA=70
°C, VGS=-10V (Note 3)
ID
-1.8
Pulsed Drain Current (Notes 1, 2)
IDM
-20
A
PD
1.38
W
Maximum Power Dissipation (Note 3)
Linear Derating Factor
0.01
W/
°C
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270
°C/W when mounted on minimum copper pad
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Rth,ja
90
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270
°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25
°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
-80
-
-
V
VGS=0V, ID=-250μA
∆BVDSS/∆Tj
-
0.08
-
V/
°C
Reference to 25
°C, ID=-250μA
VGS(th)
-1.0
-
-2.5
V
VDS=VGS, ID=-250μA
IGSS
-
-
±
10
VGS=±20V, VDS=0V
-
-
-1
VDS=-80V, VGS=0V
IDSS
-
-
-10
μA
VDS=-64V, VGS=0V (Tj=70°C)
-
104
135
ID=-2A, VGS=-10V
*RDS(ON)
-
141
185
m
Ω
ID=-1A, VGS=-4.5V
*GFS
-
5.2
-
S
VDS=-10V, ID=-2A
Dynamic
Ciss
-
537
-
Coss
-
52
-
Crss
-
37
-
pF
VDS=-30V, VGS=0V, f=1MHz
td(ON)
-
7.4
-
tr
-
17.4
-
td(OFF)
-
36
-
tf
-
24.8
-
ns
VDS=-40V, ID=-1A, VGS=-10V
RG=10Ω


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