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MMSF4N01HD データシート(PDF) 1 Page - ON Semiconductor |
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MMSF4N01HD データシート(HTML) 1 Page - ON Semiconductor |
1 / 12 page Publication Order Number: MMSF4N01HD/D © Semiconductor Components Industries, LLC, 2000 September, 2004 − Rev. XXX 1 MMSF4N01HD Preferred Device Power MOSFET 4 Amps, 20 Volts N−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOS t devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. • Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Ideal for Synchronous Rectification • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • I DSS Specified at Elevated Temperature • Mounting Information for SO−8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 8.0 Vdc Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 µs) ID ID IDM 5.8 4.5 50 Adc Apk Total Power Dissipation @ TA = 25°C (Note 1.) PD 2.5 Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance − Junction to Ambient (Note 1.) RθJA 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C 1. Mounted on 2 ″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. N−C 1 2 3 4 8 7 6 5 Top View Source Source Gate Drain Drain Drain Drain 1 8 Device Package Shipping ORDERING INFORMATION MMSF4N01HDR2 SO−8 2500 Tape & Reel SO−8 CASE 751 STYLE 13 http://onsemi.com N−Channel LYWW MARKING DIAGRAM D S G S4N01 L = Location Code Y = Year WW = Work Week PIN ASSIGNMENT Preferred devices are recommended choices for future use and best overall value. 4 AMPERES 20 VOLTS RDS(on) = 45 mW |
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