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MMSF4N01HD データシート(PDF) 1 Page - ON Semiconductor

部品番号 MMSF4N01HD
部品情報  N?묬hannel Power MOSFET
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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Publication Order Number:
MMSF4N01HD/D
© Semiconductor Components Industries, LLC, 2000
September, 2004 − Rev. XXX
1
MMSF4N01HD
Preferred Device
Power MOSFET
4 Amps, 20 Volts
N−Channel SO−8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOS
t devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
Ultra Low R
DS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Ideal for Synchronous Rectification
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS Specified at Elevated Temperature
Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 8.0
Vdc
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 100°C
Drain Current − Single Pulse (tp ≤ 10 µs)
ID
ID
IDM
5.8
4.5
50
Adc
Apk
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
2.5
Watts
Operating and Storage Temperature Range
TJ, Tstg
− 55 to
150
°C
Thermal Resistance − Junction to Ambient
(Note 1.)
RθJA
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. Mounted on 2
″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
N−C
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
1
8
Device
Package
Shipping
ORDERING INFORMATION
MMSF4N01HDR2
SO−8
2500 Tape & Reel
SO−8
CASE 751
STYLE 13
http://onsemi.com
N−Channel
LYWW
MARKING
DIAGRAM
D
S
G
S4N01
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
4 AMPERES
20 VOLTS
RDS(on) = 45 mW


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