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SB007-03C-TB-E データシート(PDF) 1 Page - ON Semiconductor |
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SB007-03C-TB-E データシート(HTML) 1 Page - ON Semiconductor |
1 / 5 page 71112 TKIM/13107 TIIM TC-00000490 / 71206 / 42506SB MSIM TA-100466 No.A0405-1/5 http://onsemi.com Semiconductor Components Industries, LLC, 2013 September, 2013 SB007-03C Schottky Barrier Diode 30V, 70mA, Low IR, Single CP Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Applications • High frequency rectification (switching regulators, converters, choppers) Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V Average Output Current I O 70 mA Surge Forward Current I FSM 50Hz sine wave, 1 cycle 2 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Package Dimensions unit : mm (typ) 7013A-004 Ordering number : ENA0405B Product & Package Information • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TB Marking Electrical Connection 1 : Anode 2 : No Contact 3 : Cathode CP 12 3 2.9 0.95 0.4 0.1 TB SB007-03C-TB-E G 3 12 |
同様の部品番号 - SB007-03C-TB-E |
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同様の説明 - SB007-03C-TB-E |
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