1

Publication Order Number :

SB10-05P/D

www.onsemi.com

© Semiconductor Components Industries, LLC, 2015

February 2015 - Rev. 1

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of this data sheet.

SB10-05P

Applications

• High Frequency Rectification (Switching Regulators, Converters, Choppers)

Features

• Short Reverse Recovery Time (trr max=10ns)

• Low Switching Noise

• Low Leakage Current and High Reliability Due to Reliable Planar Structure

• Pb-Free and RoHS Compliance

Specifications

Absolute Maximum Ratings at Ta = 25

°C

Parameter

Symbol

Conditions

Value

Unit

Repetitive Peak Reverse Voltage

VRRM

50

V

Non-repetitive Peak Reverse Surge Voltage

VRSM

55

V

Average Output Current

IO

1A

Surge Forward Current

IFSM

50Hz sine wave, 1 cycle

10

A

Junction Temperature

Tj

−55 to +125

°C

Storage Temperature

Tstg

−55 to +125

°C

Electrical Characteristics at Ta

= 25°C

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Reverse Voltage

VR

IR=300μA

50

V

Forward Voltage

VF

VF=1A

0.55

V

Reverse Current

IR

VR=25V

80

μA

Interterminal Capacitance

C

VR=10V, f=1MHz

52

pF

Reverse Recovery Time

trr

IF= IR=100mA, See specification Test Circuit

10

ns

Thermal Resistance

Rthj-a (1)

300

°C / W

Rthj-a (2)

Mounted on a ceramic board (250mm

110

°C / W

Packing Type : TD

Marking

Electrical Connection

1 : Anode

2 : Cathode

3 : No Contact

SOT-89 / PCP-1

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

Schottky Barrier Diode

50V, 1A, Low IR, Single

TD