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BUZ325 データシート(PDF) 1 Page - Infineon Technologies AG |
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BUZ325 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page Semiconductor Group 1 07/96 BUZ 325 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 325 400 V 12.5 A 0.35 Ω TO-218 AA C67078-S3118-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C ID 12.5 A Pulsed drain current TC = 25 °C IDpuls 50 Avalanche current,limited by Tjmax IAR 12.5 Avalanche energy,periodic limited by Tjmax EAR 13 mJ Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 7.5 mH, Tj = 25 °C EAS 670 Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 125 W Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
同様の部品番号 - BUZ325 |
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同様の説明 - BUZ325 |
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