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STPTIC-82F1M6 データシート(PDF) 4 Page - STMicroelectronics |
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STPTIC-82F1M6 データシート(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STPTIC 4/13 DocID023772 Rev 4 Table 4. Representative performances (Tamb = 25 °C) Symbol Parameter Conditions Value Unit Min Typ Max C2V Capacitance at 2V bias STPTIC-12 1.08 1.20 1.32 pF STPTIC-27 2.43 2.7 2.97 pF STPTIC-33 2.97 3.3 3.63 pF STPTIC-39 3.51 3.9 4.29 pF STPTIC-47 4.23 4.7 5.17 pF STPTIC-56 5.04 5.6 6.16 pF STPTIC-68 6.12 6.8 7.48 pF STPTIC-82 7.38 8.2 9.02 IL Leakage current Measured with Vbias = 20 V 100 nA ΔC Tuning range Ratio between C2V/C20V measured at 100 kHz 3/1 3.5/1 QLB Quality factor Measured at 900 MHz 65 QHB Quality factor Measured at 1800 MHz 45 IP3 Third order intercept point Vbias = 2 V (1) and (3) 1. F1 = 894 MHz, F2 = 849 MHz, P1 = 20 dBm, P2 = -15 dBm, 2f1 - f2 = 939 MHz 60 dBm Vbias = 20 V (1) and (3) 70 dBm H2 Second harmonic Vbias = 2 V (2) and (3) 2. 894 MHz, Pin = 34 dBm -65 dBm Vbias = 20 V (2) and (3) -65 dBm H3 Third harmonic Vbias = 2 V (2) and (3) -45 dBm Vbias = 20 V (2) and (3) 3. IP3 and harmonics are measured in the shunt/series configuration in a 50 Ω environment -45 dBm tT Transition time From Cmin to Cmax (4) 4. One or both of RFin and RFout must be connected to DC ground 135 µs From Cmax to Cmin (4) 100 µs |
同様の部品番号 - STPTIC-82F1M6 |
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同様の説明 - STPTIC-82F1M6 |
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