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ACE7331M データシート(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE7331M データシート(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 7 page ACE7331M P-Channel 30-V MOSFET VER 1.1 3 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±25 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24 V, VGS = 0 V -1 uA VDS = -24 V, VGS = 0 V, TJ = 55°C -5 On-State Drain Current A ID(on) VDS = -5 V, VGS = -10 V -50 A Drain-Source On-Resistance A RDS(ON) VGS = -10 V, ID = -11.5 A 19 mΩ VGS = -4.5 V, ID =-9.3 A 30 Forward Transconductance A gFS VDS =-15 V, ID = -11.5 A 29 S Diode Forward Voltage VSD IS = 2.5 A, VGS = 0 V -0.8 V Dynamic b Total Gate Charge Qg VDS = -15 V, VGS = -5 V, ID =- 11.5 A 25 nC Gate-Source Charge Qgs 11 Gate-Drain Charge Qgd 17 Turn-On Delay Time td(on) VDS = -15 V, RL = 6 Ω, ID = -1 A, VGEN = -10 V 15 ns Rise Time tr 13 Turn-Off Delay Time td(off) 100 Fall Time tf 54 Note : a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing |
同様の部品番号 - ACE7331M |
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同様の説明 - ACE7331M |
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