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ACE7331M データシート(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE7331M データシート(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE7331M P-Channel 30-V MOSFET VER 1.1 1 Description The ACE7331M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper lead frame DFN3x3-8L saves board space • Fast switching speed • High performance trench technology Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current a TA=25℃ ID -13.4 A TA=70℃ -11.0 Pulsed Drain Current b IDM ±50 A Continuous Source Current (Diode Conduction) a IS -2.1 A Power Dissipation a TA=25℃ PD 3.5 W TA=70℃ 2.0 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t <= 10 sec RθJA 35 °C/W Steady State 81 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature |
同様の部品番号 - ACE7331M |
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同様の説明 - ACE7331M |
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