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SPP02N80C3 データシート(PDF) 1 Page - Infineon Technologies AG |
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SPP02N80C3 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page 2003-10-14 Page 1 SPP02N80C3 SPA02N80C3 Final data Cool MOS™ Power Transistor VDS 800 V RDS(on) 2.7 Ω ID 2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 02N80C3 02N80C3 Type Package Ordering Code SPP02N80C3 P-TO220-3-1 Q67040-S4432 SPA02N80C3 P-TO220-3-31 Q67040S4634 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 2 1.2 21) 1.21) A Pulsed drain current, tp limited by Tjmax ID puls 6 6 A Avalanche energy, single pulse ID=1A, VDD=50V EAS 90 90 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=2A, VDD=50V EAR 0.05 0.05 Avalanche current, repetitive tAR limited by Tjmax IAR 2 2 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 42 30.5 W SPP Operating and storage temperature Tj , Tstg -55...+150 °C |
同様の部品番号 - SPP02N80C3 |
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同様の説明 - SPP02N80C3 |
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