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SPP07N65C3 データシート(PDF) 1 Page - Infineon Technologies AG |
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SPP07N65C3 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 14 page 2004-04-07 Rev. 1.0 Page 1 SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS™ Power Transistor VDS @ Tjmax 730 V RDS(on) 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO220-3-1 P-TO262-3-1 2 P-TO220-3-1 2 3 1 P-TO220-3-31 1 2 3 Marking 07N65C3 07N65C3 07N65C3 Type Package Ordering Code SPP07N65C3 P-TO220-3-1 Q67040-S4624 SPI07N65C3 P-TO262-3-1 Q67040-S4623 SPA07N65C3 P-TO220-3-31 Q67040-S4622 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 7.31) 4.61) A Pulsed drain current, t p limited by Tjmax ID puls 21.9 21.9 A Avalanche energy, single pulse ID=1.5A, VDD=50V EAS 230 230 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD=50V EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 2.5 2.5 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 83 32 W Operating and storage temperature Tj , Tstg -55...+150 °C |
同様の部品番号 - SPP07N65C3 |
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同様の説明 - SPP07N65C3 |
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