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FSB50550ASE データシート(PDF) 4 Page - Fairchild Semiconductor |
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FSB50550ASE データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FSB50550ASE Rev. C0 Electrical Characteristics (T J = 25°C, VCC = VBS = 15 V unless otherwise specified.) Inverter Part (each MOSFET unless otherwise specified.) Control Part (each HVIC unless otherwise specified.) Bootstrap Diode Part (each bootstrap diode unless otherwise specified.) 2nd Notes: 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM ® 5 product. V PN should be sufficiently less than this value considering the effect of the stray inductance so that VDS should not exceed BVDSS in any case. 2. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7. 3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test circuit that is same as the switching test circuit. 4. VTS is only for sensing-temperature of module and cannot shutdown MOSFETs automatically. 5. Built-in bootstrap diode includes around 15 Ω resistance characteristic. Please refer to Figure 2. Symbol Parameter Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VIN = 0 V, ID = 1 mA (2nd Note 1) 500 - - V IDSS Zero Gate Voltage Drain Current VIN = 0 V, VDS = 500 V - - 1 mA RDS(on) Static Drain - Source Turn-On Resistance VCC = VBS = 15 V, VIN = 5 V, ID = 1.2 A - 1.0 1.4 VSD Drain - Source Diode Forward Voltage VCC = VBS = 15V, VIN = 0 V, ID = -1.2 A - - 1.2 V tON Switching Times VPN = 300 V, VCC = VBS = 15 V, ID = 1.2 A VIN = 0 V 5 V, Inductive Load L = 3 mH High- and Low-Side MOSFET Switching (2nd Note 2) - 2800 - ns tOFF - 740 - ns trr - 290 - ns EON - 270 - J EOFF -10- J RBSOA Reverse Bias Safe Oper- ating Area VPN = 400 V, VCC = VBS = 15 V, ID = IDP, VDS = BVDSS, TJ = 150°C High- and Low-Side MOSFET Switching (2nd Note 3) Full Square Symbol Parameter Conditions Min Typ Max Unit IQCC Quiescent VCC Current VCC = 15 V, VIN = 0 V Applied Between VCC and COM - - 200 A IQBS Quiescent VBS Current VBS = 15 V, VIN = 0 V Applied Between VB(U) - U, VB(V) - V, VB(W) - W - - 100 A UVCCD Low-Side Under-Voltage Protection (Figure 8) VCC Under-Voltage Protection Detection Level 7.4 8.0 9.4 V UVCCR VCC Under-Voltage Protection Reset Level 8.0 8.9 9.8 V UVBSD High-Side Under-Voltage Protection (Figure 9) VBS Under-Voltage Protection Detection Level 7.4 8.0 9.4 V UVBSR VBS Under-Voltage Protection Reset Level 8.0 8.9 9.8 V VTS HVIC Temperature Sens- ing Voltage Output VCC = 15 V, THVIC = 25°C (2nd Note 4) 600 790 980 mV VIH ON Threshold Voltage Logic HIGH Level Applied between IN and COM -- 2.9 V VIL OFF Threshold Voltage Logic LOW Level 0.8 - - V Symbol Parameter Conditions Min Typ Max Unit VFB Forward Voltage IF = 0.1 A, TC = 25°C (2nd Note 5) - 2.5 - V trrB Reverse Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns |
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同様の説明 - FSB50550ASE |
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