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BCP51 データシート(PDF) 2 Page - Diotec Semiconductor |
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BCP51 データシート(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 1) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 2) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 25 01.11.2003 General Purpose Transistors BCP 51, BCP 52, BCP53 Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) - V CE = 2 V, - IC = 150 mA BCP 5x-6 h FE 40 – 100 BCP 5x-10 h FE 63 – 160 BCP 5x-16 h FE 100 – 250 - V CE = 2 V, - IC = 5 mA BCP 51... BCP53 h FE 63 – – - V CE = 2 V, - IC = 500 mA h FE 40 – – Base-Emitter voltage – Basis-Emitter-Spannung 1) - V CE = 2 V, - IC = 500 mA - V BEon – – 1 V Gain-Bandwidth Product – Transitfrequenz - V CE = 5 V, - IC = 10 mA, f = 100 MHz f T – 115 MHz – Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft R thA 95 K/W 2) junction to soldering point – Sperrschicht zu Lötpad R thS 14 K/W Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BCP 54, BCP 55, BCP 56 |
同様の部品番号 - BCP51 |
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同様の説明 - BCP51 |
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