2SA1007 datasheet(2/2 Pages) ISC

部品番号	2SA1007

部品情報	High Current Capability

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メーカー	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc Silicon PNP Power Transistor

2SA1007

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -30mA; IB= 0

-150

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-150

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-6

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5A; IB= -0.5A

-2.0

V

ICBO

Collector Cutoff Current

VCB= -150V; IE= 0

-50

μ A

IEBO

Emitter Cutoff Current

VEB= -6V; IC= 0

-50

μ A

hFE

DC Current Gain

IC= -1A ; VCE= -5V

40

320

fT

Current-Gain

—Bandwidth Product

IC= -1A ; VCE= -10V

50

MHz

同様の部品番号 - 2SA1007

メーカー	部品番号	データシート	部品情報
New Jersey Semi-Conduct...	2SA1007	180Kb / 2P	Silicon PNP Power Transistor

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