2SC2166 datasheet(1/2 Pages) ISC

部品番号	2SC2166

部品情報	High Reliability

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

2SC2166

DESCRIPTION

·High Power Gain-

: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V

·High Reliability

APPLICATIONS

·Designed for 3 to 4 watts output power amplifiers in HF band

mobile radio applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

45

V

VCER

Collector-Emitter Voltage RBE= 10Ω

45

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current

4

A

PC

Collector Power Dissipation

@TC=25℃

12.5

W

Collector Power Dissipation

@Ta=25℃

1.5

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-a

Thermal Resistance,Junction to Ambient

83

℃/W

Rth j-c

Thermal Resistance,Junction to Case

10

℃/W

同様の部品番号 - 2SC2166

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Quanzhou Jinmei Electro...	2SC2166	32Kb / 2P	Silicon NPN Power Transistor

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