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1N4003G データシート(PDF) 1 Page - Taiwan Memory Technology

部品番号 1N4003G
部品情報  1A, 50V - 1000V Glass Passivated Rectifiers
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メーカー  TMT [Taiwan Memory Technology]
ホームページ  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

1N4003G データシート(HTML) 1 Page - Taiwan Memory Technology

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CREAT BY ART
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
VRRM
50
100
200
400
600
800
1000
V
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
IF(AV)
A
CJ
pF
RθJA
°C/W
TJ
°C
TSTG
°C
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1410021
Version: O15
- 55 to +150
5
100
Operating junction temperature range
Storage temperature range
- 55 to +150
Typical junction capacitance (Note 2)
10
Typical thermal resistance
80
V
Maximum reverse current @ rated VR TJ=25 °C
TJ=125 °C
IR
μA
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
1
1N
4007G
1.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
1N
4001G
1N
4002G
1N
4003G
1N
4004G
1N
4005G
1N
4006G
MECHANICAL DATA
Case:
DO-204AL (DO-41)
DO-204AL (DO-41)
Weight:
0.33 g (approximately)
1N4001G - 1N4007G
1A, 50V - 1000V Glass Passivated Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Taiwan Semiconductor


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