データシートサーチシステム |
|
MTB09N06FP-0-UB-S データシート(PDF) 2 Page - Cystech Electonics Corp. |
|
MTB09N06FP-0-UB-S データシート(HTML) 2 Page - Cystech Electonics Corp. |
2 / 8 page CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 2/8 MTB09N06FP CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±30 V Continuous Drain Current @ TC=25 °C, VGS=10V(silicon limit) (Note 5) 62 Continuous Drain Current @ TC=25 °C, VGS=10V(package limit) (Note 5) 60 Continuous Drain Current @ TC=100 °C, VGS=10V (Note 5) ID 43.8 Pulsed Drain Current (Note 4) IDM 240 Continuous Drain Current @ TA=25 °C (Note 2) 11 Continuous Drain Current @ TA=70 °C (Note 2) IDSM 8.8 Avalanche Current (Note 6) IAS 30 A Avalanche Energy @ L=1mH, ID=30A, VDD=30V (Note 6) EAS 450 Repetitive Avalanche Energy@ L=0.1mH (Note 3) EAR 6 mJ TC=25°C (Note 1) 68 Power Dissipation TC=100°C (Note 1) PD 34 TA=25°C (Note 2) 2 Power Dissipation TA=70°C (Note 2) PDSM 1.3 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.2 Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 1) 15 Thermal Resistance, Junction-to-ambient, max (Note 1) RθJA 62.5 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3 . Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. Pulse width ≤300μs pulses and duty cycle ≤0.5%. 5. Calculated continuous drain current based on maximum allowable junction temperature. 6. 100% tested by conditions of L=0.1mH, IAS=15A, VGS=10V, VDD=30V 7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient. |
同様の部品番号 - MTB09N06FP-0-UB-S |
|
同様の説明 - MTB09N06FP-0-UB-S |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |