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BUZ45B データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUZ45B データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor BUZ45B DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 10 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W PDF pdfFactory Pro www.fineprint.cn |
同様の部品番号 - BUZ45B |
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同様の説明 - BUZ45B |
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