IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYP10N65C3D1M

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

3.8

6.2

S

C

423

pF

C

oes

V

42

pF

C

res

10

pF

Q

g(on)

18

nC

Q

ge

I

4

nC

Q

gc

8

nC

t

d(on)

20

ns

t

ri

26

ns

E

on

0.24

mJ

t

d(off)

77

ns

t

fi

23

ns

E

0.11

0.17

mJ

t

d(on)

17

ns

t

ri

27

ns

E

on

0.44

mJ

t

d(off)

90

ns

t

fi

38

ns

E

off

0.15

mJ

R

thJC

2.83 °C/W

R

thCS

0.50

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

Pins: 1 - Gate

2 - Collector

3 - Emitter

Reverse Diode (FRED)

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

3.0

V

T

1.7

V

I

RM

2.5

A

t

rr

110

ns

t

rr

30

ns

R

thJC

4.0 °C/W

I

-di

I

OVERMOLDED TO-220 (IXYP) Outline

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.