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XN0F256 データシート(Datasheet) 1 Page - Panasonic Semiconductor

部品番号. XN0F256
部品情報  Silicon NPN epitaxial planar type
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メーカー  PANASONIC [Panasonic Semiconductor]
ホームページ  http://www.panasonic.com/industrial/
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1
Publication date: July 2003
SJJ00120BED
Composite Transistors
XN0F256
Silicon NPN epitaxial planar type
For muting
■ Features
• Two elements incorporated into one package
(Collector-coupled transistors with built-in resistor)
• Low collector-emitter saturation voltage V
CE(sat)
• Reduction of the mounting area and assembly cost by one half
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Internal Connection
Marking Symbol: 6A
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
600
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
6
Tr2
Tr1
5
4
3
1
2
■ Electrical Characteristics T
a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 1 µA, IE = 030
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE
= 1 µA, I
C
= 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 30 V, IE = 01
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 01
µA
Forward current transfer ratio
hFE
VCE
= 5 V, I
C
= 50 mA
100
600
Collector-emitter saturation voltage
VCE(sat)
IC = 50 mA, IB = 2.5 mA
80
mV
Input resistance
R1
−30%
4.7
+30%
k
Transition frequency
fT
VCB
= 10 V, I
E
= −50 mA, f = 200 MHz
200
MHz
2.90
1.9±0.1
0.16
+0.10
–0.06
(0.95)
0.30
+0.10
–0.05
0.50
+0.10
–0.05
(0.95)
6
5
4
1
32
+0.20
–0.05
10˚
1: Emitter (Tr1)
4: Base (Tr2)
2: Collector
5: N.C.
3: Emitter (Tr2)
6: Base (Tr1)
EIAJ: SC-74
Mini6-G1 Package




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