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LM10000 データシート(PDF) 3 Page - Texas Instruments |
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LM10000 データシート(HTML) 3 Page - Texas Instruments |
3 / 22 page LM10000 www.ti.com SNVS643C – JUNE 2010 – REVISED APRIL 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) (3) VPWI to GND −0.2V to VDD FLT_N, VDD, ADR, EN_BIAS, CONTROL, IAVS, IAVS_MIRROR, RESET_N, CNTL_EN, −0.2V to 6V VPWI, SPWI, SCLK to GND Junction Temperature −45°C to +125°C Storage Temperature −45°C to +150°C Soldering Information: See http://www.ti.com/lit/SNOA549 ESD Ratings(4) Human Body Model 2kV Machine Model 200V (1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Operating Ratings do not imply ensured performance limits. (2) The power MOSFETs can run on a separate 1V to 14V rail (Input voltage, VIN). Practical lower limit of VIN depends on selection of the external MOSFET. See the MOSFET GATE DRIVERS section under Application Information for further details. (3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. (4) ESD using the human body model which is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. OPERATING RATINGS (1) (2) VDD 3.0V to 5.5V VPWI(3) 1.6V to 3.6V (1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Operating Ratings do not imply ensured performance limits. (2) The power MOSFETs can run on a separate 1V to 14V rail (Input voltage, VIN). Practical lower limit of VIN depends on selection of the external MOSFET. See the MOSFET GATE DRIVERS section under Application Information for further details. (3) VPWI cannot be higher than VDD. THERMAL PROPERTIES Junction-to-Ambient thermal resistance 54.7°C ELECTRICAL CHARACTERISTICS Limits appearing in standard type apply for TJ = 25°C. Limits appearing in boldface type apply over full operating junction temperature range ( −40°C ≤ TJ ≤ +125°C. Unless otherwise noted, specifications apply to the LM10000 Typical Application Circuit (pg. 2) with: VDD = 5.0V, CIN = 1µF. Symbol Parameter Conditions Min Typ Max Units EN_BIAS = 0V, CONTROL = 0V 1.5 10 EN_BIAS = VDD, CONTROL = VDD 315 410 R0 = 0x7F Iq Quiescent Current µA EN_BIAS = VDD, PWI Sleep Command 196 300 EN_BIAS = VDD, PWI Shutdown Command 23 75 Rising Threshold 2.65 2.75 V UVLO Falling Threshold 2.27 2.40 Hysteresis 257 mV IADDR Address pin source current 7.5 µA IDAC ACC Accuracy Measured at full scale −3 3 % LSB DAC Step Size IDAC-MAX / 2 n (1≤ n ≤ 7) 470 nA Resolution 7 Bits FS Full Scale 59.69 µA INL Integral Non-Linearity −2 2 LSB DNL Differential Non-Linearity −0.5 0.5 LSB Copyright © 2010–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM10000 |
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同様の説明 - LM10000 |
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