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LM10000 データシート(PDF) 3 Page - Texas Instruments

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部品番号 LM10000
部品情報  AVS System Controller
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メーカー  TI1 [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI1 - Texas Instruments

LM10000 データシート(HTML) 3 Page - Texas Instruments

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LM10000
www.ti.com
SNVS643C – JUNE 2010 – REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1) (2) (3)
VPWI to GND
−0.2V to VDD
FLT_N, VDD, ADR, EN_BIAS, CONTROL, IAVS, IAVS_MIRROR, RESET_N, CNTL_EN,
−0.2V to 6V
VPWI, SPWI, SCLK to GND
Junction Temperature
−45°C to +125°C
Storage Temperature
−45°C to +150°C
Soldering Information: See http://www.ti.com/lit/SNOA549
ESD Ratings(4)
Human Body Model
2kV
Machine Model
200V
(1)
Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for
which the device operates correctly. Operating Ratings do not imply ensured performance limits.
(2)
The power MOSFETs can run on a separate 1V to 14V rail (Input voltage, VIN). Practical lower limit of VIN depends on selection of the
external MOSFET. See the MOSFET GATE DRIVERS section under Application Information for further details.
(3)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(4)
ESD using the human body model which is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin.
OPERATING RATINGS
(1) (2)
VDD
3.0V to 5.5V
VPWI(3)
1.6V to 3.6V
(1)
Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for
which the device operates correctly. Operating Ratings do not imply ensured performance limits.
(2)
The power MOSFETs can run on a separate 1V to 14V rail (Input voltage, VIN). Practical lower limit of VIN depends on selection of the
external MOSFET. See the MOSFET GATE DRIVERS section under Application Information for further details.
(3)
VPWI cannot be higher than VDD.
THERMAL PROPERTIES
Junction-to-Ambient thermal resistance
54.7°C
ELECTRICAL CHARACTERISTICS
Limits appearing in standard type apply for TJ = 25°C. Limits appearing in boldface type apply over full operating junction
temperature range (
−40°C ≤ TJ ≤ +125°C. Unless otherwise noted, specifications apply to the LM10000 Typical Application
Circuit (pg. 2) with: VDD = 5.0V, CIN = 1µF.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
EN_BIAS = 0V, CONTROL = 0V
1.5
10
EN_BIAS = VDD, CONTROL = VDD
315
410
R0 = 0x7F
Iq
Quiescent Current
µA
EN_BIAS = VDD, PWI Sleep Command
196
300
EN_BIAS = VDD, PWI Shutdown Command
23
75
Rising Threshold
2.65
2.75
V
UVLO
Falling Threshold
2.27
2.40
Hysteresis
257
mV
IADDR
Address pin source current
7.5
µA
IDAC
ACC
Accuracy
Measured at full scale
−3
3
%
LSB
DAC Step Size
IDAC-MAX / 2
n (1≤ n ≤ 7)
470
nA
Resolution
7
Bits
FS
Full Scale
59.69
µA
INL
Integral Non-Linearity
−2
2
LSB
DNL
Differential Non-Linearity
−0.5
0.5
LSB
Copyright © 2010–2013, Texas Instruments Incorporated
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