データシートサーチシステム |
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LM117HVH データシート(PDF) 5 Page - Texas Instruments |
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LM117HVH データシート(HTML) 5 Page - Texas Instruments |
5 / 28 page LM117HV, LM317HV www.ti.com SNVS773D – APRIL 2000 – REVISED SEPTEMBER 2015 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM)(1) ±2000 V (1) Manufacturing with less than 500-V HBM is possible with the necessary precautions. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT LM117HV −55 150 °C Operating junction temperature LM317HV 0 125 °C 7.4 Thermal Information LM117HV, LM317HV LM317HV NDT NDS NDE THERMAL METRIC(1) UNIT (TO-39) (TO-3) (TO-220) 3 PINS 2 PINS 3 PINS RθJA Junction-to-ambient thermal resistance 140(2) 35(2) 23.0 °C/W RθJC(top) Junction-to-case (top) thermal resistance 12 2.3 15.9 °C/W RθJB Junction-to-board thermal resistance — — 4.6 °C/W ψJT Junction-to-top characterization parameter — — 2.5 °C/W ψJB Junction-to-board characterization parameter — — 4.6 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — 0.9 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. (2) No Heat Sink Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM117HV LM317HV |
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同様の説明 - LM117HVH |
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