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MJW21194 データシート(PDF) 2 Page - ON Semiconductor

部品番号 MJW21194
部品情報  Silicon Power Transistors
Download  8 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJW21194 データシート(HTML) 2 Page - ON Semiconductor

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MJW21193 (PNP) MJW21194 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
250
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
100
µAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
100
µAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
100
µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
4.0
2.25
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
20
8
60
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
2.2
Vdc
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
matched
THD
0.8
0.08
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
500
pF
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
PNP MJW21193
NPN MJW21194
IC COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.0
10
0.1
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0
1.0
10
0.1
1.0
VCE = 10 V
5 V
TJ = 25°C
ftest = 1 MHz
10 V
VCE = 5 V
TJ = 25°C
ftest = 1 MHz


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