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LM1085IS-ADJ データシート(PDF) 9 Page - Texas Instruments |
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LM1085IS-ADJ データシート(HTML) 9 Page - Texas Instruments |
9 / 29 page LM1085 www.ti.com SNVS038H – JULY 1999 – REVISED JANUARY 2015 7 Detailed Description 7.1 Overview A basic functional diagram for the LM1085-ADJ (excluding protection circuitry) is shown in Figure 10. The topology is basically that of the LM317 except for the pass transistor. Instead of a Darlington NPN with its two diode voltage drop, the LM1085 uses a single NPN. This results in a lower dropout voltage. The structure of the pass transistor is also known as a quasi LDO. The advantage of a quasi LDO over a PNP LDO is its inherently lower quiescent current. The LM1085 is ensured to provide a minimum dropout voltage of 1.5V over temperature, at full load. Figure 10. Basic Functional Diagram for the LM1085, Excluding Protection Circuitry 7.2 Functional Block Diagram Copyright © 1999–2015, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links: LM1085 |
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同様の説明 - LM1085IS-ADJ |
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