データシートサーチシステム |
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IXYH50N65C3 データシート(PDF) 2 Page - IXYS Corporation |
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IXYH50N65C3 データシート(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 36A, VCE = 10V, Note 1 18 30 S C ies 2290 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 135 pF C res 50 pF Q g(on) 86 nC Q ge I C = 36A, VGE = 15V, VCE = 0.5 • VCES 14 nC Q gc 40 nC t d(on) 20 ns t ri 36 ns E on 0.80 mJ t d(off) 90 ns t fi 26 ns E off 0.47 0.80 mJ t d(on) 19 ns t ri 37 ns E on 1.60 mJ t d(off) 113 ns t fi 32 ns E off 0.70 mJ R thJC 0.25 °C/W R thCS TO-220 0.50 °C/W R thCS TO-247 0.21 °C/W Inductive load, T J = 25°C I C = 36A, VGE = 15V V CE = 400V, RG = 5 Note 2 Inductive load, T J = 150°C I C = 36A, VGE = 15V V CE = 400V, RG = 5 Note 2 PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. TO-263 Outline 1 = Gate 2 = Collector 3 = Emitter 4 = Collector 1 - Gate 2,4 - Collector 3 - Emitter TO-247 Outline Pins: 1 - Gate 2 - Collector 3 - Emitter TO-220 Outline |
同様の部品番号 - IXYH50N65C3 |
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同様の説明 - IXYH50N65C3 |
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