データシートサーチシステム |
|
TC217 データシート(PDF) 4 Page - Texas Instruments |
|
TC217 データシート(HTML) 4 Page - Texas Instruments |
4 / 21 page TC217 1158 × 488PIXEL CCD IMAGE SENSOR SOCS015C − OCTOBER 1989 − REVISED JUNE 1996 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 Terminal Functions TERMINAL I/O DESCRIPTION NAME NO. I/O DESCRIPTION ABG† 2 I Antiblooming gate ABG† 20 I Antiblooming gate ADB 5 I Supply voltage for amplifier drain bias AMP GND 9 Amplifier ground CDB 10 I Supply voltage for clearing drain bias IAG† 3 I Image-area gate IAG† 19 I Image-area gate OUT1 8 O Output signal 1 OUT2 7 O Output signal 2 OUT3 6 O Output signal 3 SAG1 4 I Storage-area gate SAG2 17 I Storage-area gate SRG1 14 I Serial-register gate 1 SRG2 15 I Serial-register gate 2 SRG3 16 I Serial-register gate 3 SUB† 1 Substrate and clock return SUB† 11 Substrate and clock return SUB† 12 Substrate and clock return SUB† 22 Substrate and clock return TDB 21 I Supply voltage for top drain bias TMG 18 I Transfer-multiplex gate TRG 13 I Transfer gate † All pins of the same name should be connected together externally (i.e., pin 2 to pin 20, pin 3 to pin 19, etc.). detailed description The TC217 consists of five basic functional blocks: (1) the image-sensing area, (2) the multiplexer block, (3) the image-storage area with dual field memories, (4) the serial register and transfer gates, and (5) the low-noise signal-processing amplifier block with charge-detection nodes. The location of each of these blocks is identified in the functional block diagram. image-sensing area Figure 1 and Figure 2 show cross sections with potential well diagrams and top views of image-sensing elements. As light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential wells of the sensing elements. During this time, blooming protection is activated by applying a burst of pulses to the antiblooming gate inputs every horizontal blanking interval. This prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. There are 23 full columns and one half-column of elements at the right edge of the image-sensing area that are shielded from incident light; these elements provide the dark reference used in subsequent video processing circuits to restore the video black level. There are also one half-column of light-shielded elements at the left edge of the image-sensing area and two lines of light-shielded elements at the bottom of the image area immediately above the multiplexer (the latter prevent charge leakage from the image area into the multiplexer). |
同様の部品番号 - TC217_08 |
|
同様の説明 - TC217_08 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |