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FQP15P12 データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 FQP15P12
部品情報  120V P-Channel MOSFET
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQP15P12 データシート(HTML) 1 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
QFET®
FQP15P12/FQPF15P12
120V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175
°C maximum junction temperature rating
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP15P12
FQPF15P12
Units
VDSS
Drain-Source Voltage
-120
V
ID
Drain Current
- Continuous (TC = 25°C)
-15
-15 *
A
- Continuous (TC = 100°C)
-10.6
-10.6 *
A
IDM
Drain Current
- Pulsed
(Note 1)
-60
-60 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1157
mJ
IAR
Avalanche Current
(Note 1)
-15
A
EAR
Repetitive Avalanche Energy
(Note 1)
10
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-5.0
V/ns
PD
Power Dissipation (TC = 25°C)
100
41
W
- Derate above 25°C
0.67
0.27
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP15P12
FQPF15P12
Units
RθJC
Thermal Resistance, Junction-to-Case
1.5
3.66
°C/W
RθJS
Thermal Resistance, Case-to-Sink Typ.
40
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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