FMBTA06 datasheet(3/9 Pages) FORMOSA

部品番号	FMBTA06

部品情報	Drive NPN Transistor

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メーカー	FORMOSA [Formosa MS]

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PARAMETER

Collector-Base breakdown voltage

CONDITIONS

Symbol

V

(BR)CBO

Min.

60

UNIT

Vdc

-

o

Characteristics (AT T =25 C unless otherwise noted)

A

Off Characteristics

I = 100µAdc, I = 0

c

E

PARAMETER

DCcurrent gain

CONDITIONS

Symbol

h

FE

100

UNIT

Vdc

On Characteristics

I = 10mAdc, V

= 1.0Vdc

c

CE

I = 100mAdc, V

= 1.0Vdc

c

CE

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

I = 100mAdc, I = 10mAdc

c

B

Vdc

V

CE(sat)

V

BE(on)

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Max.

Collector cutoff current

V

= 60Vdc, I = 0

CB

E

-

0.1

4.0

I

CBO

µAdc

Formosa MS

Types

FMBTA05

FMBTA06

80

-

Collector-Emitter

voltage(3)

breakdown

I = 1.0mAdc, I = 0

c

B

V

CEO

(BR)

60

80

-

Emitter-Base

voltage

breakdown

V

EBO

(BR)

I = 100µAdc, I = 0

E

C

Vdc

V

= 80Vdc, I = 0

CB

E

-

µAdc

Min.

Max.

-

100

-

FMBTA05 / FMBTA06

FMBTA05

FMBTA06

Collector Cutoff Current

V =60Vdc, IB=0

CE

I

CES

0.1

0.25

I = 100mAdc, V

= 1.0Vdc

c

CE

1.2

-

Small Signal Characteristics

PARAMETER

Current Gain Bandwidth Product (4)

CONDITIONS

Symbol

f

T

UNIT

I = 10mA, V

= 2.0V,

c

CE

f=100MHz

Min.

Max.

100

-

MHz

Document ID

Issued Date

Revised Date

Revision

Page.

FMBTA05

FMBTA06

Drive NPN Transistor

DS-231111

2008/02/10

2011/07/21

C

9

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