データシートサーチシステム |
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W02M データシート(PDF) 1 Page - Diode Semiconductor Korea |
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W02M データシート(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page 4.3± 0.5 φ 8 .1± 0.55 φ 0 .8± 0.1 FEATURES Rating to 1000V PRV Surge overload rating to 50 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. W02M W04M W06M W08M W10M UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage VDC 200 400 600 800 1000 V Maximum average forw ard Output current @T A=25 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A VF V Maximum reverse current @T A=25 μA at rated DC blocking voltage @T A=100 mA Operating junction temperature range TJ Storage temperature range TSTG 100 70 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A 35 50 WOM - 55 ---- + 150 - 55 ---- + 125 IR W005M---W10M A 10.0 Mounting Position: Any IF(AV) 1.5 SILICON BRIDGE RECTIFIERS A W005M W01M 50 100 1.0 1.0 50.0 IFSM Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
同様の部品番号 - W02M |
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同様の説明 - W02M |
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