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LM1042 データシート(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部品番号 LM1042
部品情報  Fluid Level Detector
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メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM1042 データシート(HTML) 3 Page - National Semiconductor (TI)

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Electrical Characteristics
VCC e 13V TA within operating range except where stated otherwise CT e 22 mF RT e 12k (Continued)
Tested Limits
Design Limits
Symbol
Parameter
Conditions
(Note 2)
(Note 3)
Units
Min
Max
Min
Typ
Max
V1
Probe 1 Input
VCC e 9V to 18V
1
5
1
5
V
Voltage Range
VCC e 75V I4 k 25 mA
1
35
V
(VREG e 60V)
V5
Probe 1 Open
At Pin 5
VREGb07 VREGb05 VREGb085 VREGb06 VREGb035
V
Circuit Threshold
V5
Probe 1 Short
05
07
035
06
085
V
Circuit Threshold
I14
Pin 14 Input
Pin 14 e 4V
b
20
20
20
nA
Leakage Current
I1
Pin 1 Input
Pin 1 e 300 mV
b
50
50
15
50
nA
Leakage Current
TR
Repeat Period
CR e 22 mF (Note 5)
12
28
91
17
36
s
CR Discharge Time
CR e 22 mF
70
135
ms
CM
Memory Capacitor Value
047
m
F
C1
Input Capacitor Value
047
m
F
Sensitivity fo Electrostatic Discharge
Pins 7 10 13 and 14 will withstand greater than 1500V when tested using 100 pF and 1500X in accordance with National Semiconductor standard ESD test
procedures
All other pins will withstand in excess of 2 kV
Note 1
Test circuit for over voltage capability at pins 3 6 8
TLH8709 – 2
Note 2
Guaranteed and 100% production tested at 25 C These limits are used to calculate outgoing quality levels
Note 3
Limits guardbanded to include parametric variations TA eb40 Cto a80 C and from VCC e 75V to 18V These limits are not used to calculate AOQL
figures
Note 4
Variations over temperature range are not production tested
Note 5
Time for first repeat period see
Figure 6
Note 6
Probe 1 amplifier tests are measured with pin 12 ramp voltage held between the T3 and T4 conditions (pin 12
11V) having previously been held above
41V to simulate ramp action See Figure 5
Note 7
When measuring gain separate ground wire sensing is required at pin 2 to ensure sufficiently accurate results
Linearity is defined as the difference between the predicted value of VB (VB ) and the measured value
Note 8
Above TA e 25 C derate with ijA e 70 CW
TLH8709 – 15
For probe 1 and probe 2Gain (G) e
VCbVA
VcbVa
Input offset e
VC
G
b
Vc
(
Linearity e
VB
VB
b
1
( c100%
VB e VA a G(Vb b Va)
3


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