データシートサーチシステム |
|
LM104H データシート(PDF) 2 Page - National Semiconductor (TI) |
|
|
LM104H データシート(HTML) 2 Page - National Semiconductor (TI) |
2 / 6 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 6) LM104LM204 LM304 Input Voltage 50V 40V Input-Output Voltage Differential 50V 40V Power Dissipation (Note 1) 500 mW 500 mW Operating Temperature Range LM104 b 55 Cto a125 C LM204 b 25 Cto a85 C LM304 0 Cto a70 C Storage Temperature Range b 65 Cto a150 C b 65 Cto a150 C Lead Temperature (Soldering 10 sec) 260 C for plastic 300 C for hermetic Electrical Characteristics Parameter Conditions LM104LM204 LM304 Units Min Typ Max Min Typ Max Input Voltage Range b 50 b 8 b 40 b 8V Output Voltage Range b 40 b 0015 b 30 b 0035 V Output-Input Voltage IO e 20 mA 20 50 20 40 V Differential (Note 3) IO e 5 mA 05 50 05 40 V Load Regulation (Note 4) O s IO s 20 mA RSC e 15X 15 15 mV Line Regulation (Note 5) VOUT s b5V D VIN e 01 VIN 0056 01 0056 01 % Ripple Rejection C19 e 10 mF f e 120 Hz VIN k b15V 02 05 02 05 mVV b 7V t VIN t b15V 05 10 05 10 mVV Output Voltage Scale Factor R2-3 e 24k 18 20 22 18 20 22 VkX Temperature Stability VO s b1V 03 10 03 10 % Output Noise Voltage 10 Hz s f s 10 kHz VO s b5V C1-9 e 0 0007 0007 % C1-9 e 10 mF15 15 m V Standby Current Drain IL e 5 mA VO e 0 17 25 17 25 mA VO eb30V 36 50 mA VO eb40V 36 50 mA Long Term Stability VO s b1V 001 10 001 10 % Note 1 The maximum junction temperature of the LM104 is 150 C while that of the LM204 is 125 C and LM304 is 100 C For operating at elevated temperatures devices in the H10C package must be derated based on a thermal resistance of 150 CW junction to ambient or 45 CW junction to case Note 2 These specifications apply for junction temperatures between b55 C and 150 C (between b25 C and 100 C for the LM204 and 0 Cto a85 C for the LM304) and for input and output voltages within the ranges given unless otherwise specified The load and line regulation specifications are for constant junction temperature Temperature drift effects must be taken into account separately when the unit is operating under conditions of high dissipation Note 3 When external booster transistors are used the minimum output-input voltage differential is increased in the worst case by approximately 1V Note 4 The output currents given as well as the load regulation can be increased by the addition of external transistors The improvement factor will be roughly equal to the composite current gain of the added transistors Note 5 With zero output the dc line regulation is determined from the ripple rejection Hence with output voltages between 0V and b 5V a dc output variation determined from the ripple rejection must be added to find the worst-case line regulation Note 6 Refer to RETS104X drawing for military specifications for the LM104 2 |
同様の部品番号 - LM104H |
|
同様の説明 - LM104H |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |