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FSB50550A データシート(PDF) 4 Page - Fairchild Semiconductor

部品番号 FSB50550A
部品情報  Motion SPM 5 Series Version 2 User?셲 Guide
Download  28 Pages
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FSB50550A データシート(HTML) 4 Page - Fairchild Semiconductor

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AN-9080
APPLICATION NOTE
© 2013 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev. 1.0.1 • 4/16/14
4
3.
Package
3.1. Internal Circuit Diagram
Major differences between Version 2 and previous
versions are red in the internal circuit diagram in Figure 2.
Though some old versions also have these features,
Version 2 widely adopts these features. Main differences
are Vts, internal connections between VS and sources of
high-side FRFETs, and internal bootstrap diodes. The Vts
pin is from V-phase HVIC only and sends out the
temperature sensing signal.
(1) COM
(2) V
B(U)
(3) V
CC(U)
(4) IN
(UH)
(5) IN
(UL)
(6) N.C
(7) V
B(V)
(8) V
CC(V)
(9) IN
(VH)
(10) IN
(VL)
(11) Vts
(12) V
B(W)
(13) V
CC(W)
(14) IN
(WH)
(15) IN
(WL)
(16)
(17) P
(18) U, V
S(U)
(19) N
U
(20) N
V
(21) V, V
S(V)
(22) N
W
(23) W, V
S(W)
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
Vts
COM
VCC
LIN
HIN
VB
HO
VS
LO
N.C
Figure 2. Internal Circuit Diagram of Motion SPM 5
Series Version 2 Products
3.2.
Pin Description
Figure 3 shows the locations of pins and the names of
double-DIP package. Note that Vb pins have longer leads to
accommodate further creepage distance on the PCB. Figure
4 in the later section illustrates the internal layout of the
module in more detail.
Figure 3. Pin Numbers and Names
Table 3. Pin Descriptions
Pin #
Name
Pin Description
1
COM
IC common supply ground
2
VB(U)
Bias voltage for U-phase high-side
MOSFET driving
3
VCC(U)
Bias voltage for U-phase IC and low-side
MOSFET driving
4
IN(UH)
Input for U-phase high-side gate signal
5
IN(UL)
Input for U-phase low-side gate signal
6
NC
No connection
7
VB(V)
Bias voltage for V-phase high-side
MOSFET driving
8
VCC(V)
Bias voltage for V-phase IC and low-side
MOSFET driving
9
IN(VH)
Input for V-phase high-side gate signal
10
IN(VL)
Input for V-phase low-side gate signal
11
VTS
Analog voltage output proportional to IC
temperature
12
VB(W)
Bias voltage for W-phase high-side
MOSFET driving
13
VCC(W)
Bias voltage for W-phase IC and low-side
MOSFET driving
14
IN(WH)
Input for W-phase high-side gate signal
15
IN(WL)
Input for W-phase low-side gate signal
16
NC
No connection
17
P
Positive DC-link input
18
U, VS(U)
Output for U-phase and bias voltage
ground for high-side FET driving
19
NU
Source of U-phase low-side MOSFET
20
NV
Source of V-phase low-side MOSFET
21
V, VS(V)
Output for V-phase and bias voltage
ground for high-side MOSFET driving
22
NW
Source of W-phase low-side MOSFET
23
W, VS(W)
Output for W-phase and bias voltage
ground for high-side MOSFET driving
High-Side Bias Voltage Pins for Driving the High-
Side MOSFET / High-Side Bias Voltage Ground
Pins for Driving the High-Side MOSFET
Pins: VB(U) – U,VS(U), VB(V) – V, VS(V), VB(W) – W, VS(W)
These are drive power supply pins for providing gate
drive power to the high-side MOSFETs.
The advantage of the bootstrap scheme is that no
separate external power supplies are required to drive
the high-side MOSFETs.
Each bootstrap capacitor is generally charged from the
VCC supply during the on-state of the corresponding
low-side MOSFET.


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