データシートサーチシステム |
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LM106 データシート(PDF) 4 Page - National Semiconductor (TI) |
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LM106 データシート(HTML) 4 Page - National Semiconductor (TI) |
4 / 6 page Electrical Characteristics (Note 2) (Continued) Note 1: The maximum junction temperature of LM106 is 150˚C, LM306 is 85˚C. For operating at elevated temperatures, devices must be derated based on a thermal resistance of 170˚C/W, junction to ambient, or 23˚C/W, junction to case. Note 2: These specifications apply for −3V ≥ V− ≥ −12V, V+ = 12V and TA = 25˚C unless otherwise specified. All currents into device pins are considered positive. Note 3: The offset voltages and offset currents given are the maximum values required to drive the output down to 0.5V or up to 4.4V (0.5V or up to 4.8V for the LM306). Thus, these parameters actually define an error band and take into account the worst-case effects of voltage gain, specified supply voltage variations, and common mode voltage variations. Note 4: The response time specified (see definitions) is for a 100 mV input step with 5 mV overdrive. Note 5: All currents into device pins are considered positive. Note 6: Refer to RETS106X for LM106 military specifications. Typical Applications Typical Performance Characteristics Level Detector and Lamp Driver DS007756-4 Fast Response Peak Detector DS007756-5 Relay Driver DS007756-6 Adjustable Threshold Line Receiver DS007756-7 *Optional for response time control. Transfer Function DS007756-9 Transconductance DS007756-10 Voltage Gain DS007756-11 PrintDate=1997/05/07 PrintTime=10:34:20 6917 ds007756 Rev. No. 1 Proof 4 www.national.com 4 |
同様の部品番号 - LM106 |
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同様の説明 - LM106 |
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