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LM110 データシート(PDF) 2 Page - National Semiconductor (TI) |
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LM110 データシート(HTML) 2 Page - National Semiconductor (TI) |
2 / 16 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications (Note 6) Supply Voltage g 18V Power Dissipation (Note 1) 500 mW Input Voltage (Note 2) g 15V Output Short Circuit Duration (Note 3) Indefinite Operating Temperature Range LM110 b 55 Cto a125 C LM210 b 25 Cto a85 C LM310 0 Cto a70 C Storage Temperature Range b 65 Cto a150 C Lead Temperature (Soldering 10 sec) 260 C Soldering Information Dual-In-Line Package Soldering (10 sec) 260 C Small Outline Package Vapor Phase (60 sec) 215 C Infrared (15 sec) 220 C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering sur- face mount devices ESD rating to be determined Electrical Characteristics (Note 4) Parameter Conditions LM110 LM210 LM310 Units Min Typ Max Min Typ Max Min Typ Max Input Offset Voltage TA e 25 C 15 40 15 40 25 75 mV Input Bias Current TA e 25 C 10 30 10 30 20 70 nA Input Resistance TA e 25 C1010 1012 1010 1012 1010 1012 X Input Capacitance 15 15 15 pF Large Signal Voltage TA e 25 C VS e g15V 0999 09999 0999 09999 0999 09999 VV Gain VOUT e g10V RL e 8kX Output Resistance TA e 25 C 075 25 075 25 075 25 X Supply Current TA e 25 C 39 55 39 55 39 55 mA Input Offset Voltage 60 60 10 mV Offset Voltage b 55 C s TA s a85 C6 6 m V C Temperature Drift a 85 s TA s 125 C12 m V C 0 C s TA s a70 C10 m V C Input Bias Current 10 10 10 nA Large Signal Voltage VS e g15V VOUT e g10V 0999 0999 0999 VV Gain RL e 10 kX Output Voltage VS e g15V RL e 10 kX g 10 g 10 g 10 V Swing (Note 5) Supply Current TA e 125 C 20 40 20 40 mA Supply Voltage g 5V s VS s g18V 70 80 70 80 70 80 dB Rejection Ratio Note 1 The maximum junction temperature of the LM110 is 150 C of the LM210 is 100 C and of the LM310 is 85 C For operating at elevated temperatures devices in the HO8 package must be derated based on a thermal resistance of 165 CW junction to ambient or 22 CW junction to case The thermal resistance of the dual-in-line package is 100 CW junction to ambient Note 2 For supply voltages less than g15V the absolute maximum input voltage is equal to the supply voltage Note 3 Continuous short circuit for the LM110 and LM210 is allowed for case temperatures to 125 C and ambient temperatures to 70 C and for the LM310 70 C case temperature or 55 C ambient temperature It is necessary to insert a resistor greater than 2 kX in series with the input when the amplifier is driven from low impedance sources to prevent damage when the output is shorted RS e 5k min 10k typical is recommended for dynamic stability in all applications Note 4 These specifications apply for g5V s VS s g18V and b55 C s TA 125 C for the LM110 b25 C s TA s 85 C for the LM210 and 0 C s TA s 70 C for the LM310 unless otherwise specified Note 5 Increased output swing under load can be obtained by connecting an external resistor between the booster and V b terminals See curve Note 6 Refer to RETS110X for LM110H LM110J military specifications Application Hint The input must be driven from a source impedance of typically 10 kX (5 kX min) to maintain stability The total source impedance will be reduced at high frequencies if there is stray capacitance at the input pin In these cases a 10 kX resistor should be inserted in series with the input physically close to the input pin to minimize the stray capacitance and prevent oscillation 2 |
同様の部品番号 - LM110 |
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同様の説明 - LM110 |
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