データシートサーチシステム |
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MTB013N10RH8 データシート(PDF) 1 Page - Cystech Electonics Corp. |
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MTB013N10RH8 データシート(HTML) 1 Page - Cystech Electonics Corp. |
1 / 10 page CYStech Electronics Corp. Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 1/10 MTB013N10RH8 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTB013N10RH8 BVDSS 100V ID@VGS=10V, TC=25°C 42A ID@VGS=10V, TA=25°C 14.3A 9.8mΩ VGS=10V, ID=15A RDSON(TYP) 11.1mΩ VGS=4.5V, ID=10A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol Outline Ordering Information Device Package Shipping MTB013N10RH8-0-T6-G DFN 5 ×6 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel DFN5×6 MTB013N10RH8 Pin 1 D D D G:Gate D:Drain S:Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products S S S G D D D D D S S S G Pin 1 Product name |
同様の部品番号 - MTB013N10RH8 |
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同様の説明 - MTB013N10RH8 |
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