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FM24CL16-G データシート(PDF) 7 Page - List of Unclassifed Manufacturers

部品番号 FM24CL16-G
部品情報  16Kb FRAM Serial 3V Memory
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FM24CL16-G データシート(HTML) 7 Page - List of Unclassifed Manufacturers

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FM24CL16
Rev 2.2
July 2003
Page 7 of 13
command to be issued with the slave address set to 1.
The operation is now a current address read. This
operation is illustrated in Figure 9.
S
A
Slave Address
1
Data Byte
1
P
By Master
By FM24CL16
Start
Address
Stop
Acknowledge
No
Acknowledge
Data
Figure 7. Current Address Read
S
A
Slave Address
1
Data Byte
1
P
By Master
By FM24CL16
Start
Address
Stop
Acknowledge
No
Acknowledge
Data
Data Byte
A
Acknowledge
Figure 8. Sequential Read
S
A
Slave Address
1
Data Byte
1
P
By Master
By FM24CL16
Start
Address
Stop
No
Acknowledge
Data
Data Byte
A
Acknowledge
S
A
Slave Address
0
Word Address
A
Start
Address
Acknowledge
Figure 9. Selective (Random) Read
Endurance
A
typical
EEPROM
has
a
write
endurance
specification that is fixed. Surpassing the specified
level of cycles on an EEPROM usually leads to a
hard memory failure. The 24CL16 has no such
limitation.
Applications
The versatility of FRAM technology fits into many
diverse applications. Clearly the strength of higher
write endurance and faster writes make FRAM
superior
to
EEPROM
in
all
but
one-time
programmable applications. The advantage is most
obvious in data collection environments where writes
are frequent and data must be nonvolatile.
The attributes of fast writes and high write endurance
combine in many innovative ways. A short list of
ideas is provided here.
1.
Data collection. In applications where data is
collected and saved, FRAM provides a superior
alternative to other solutions. It is more cost effective
than battery backup for SRAM and provides better
write attributes than EEPROM.
2.
Configuration. Any nonvolatile memory can
retain a configuration. However, if the configuration
changes and power failure is a possibility, the higher
write endurance of FRAM allows changes to be
recorded without restriction. Any time the system
state is altered, the change can be written. This avoids
writing to memory on power down when the available
time is short and power scarce.


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