データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

KM29U128IT データシート(PDF) 7 Page - Samsung semiconductor

部品番号 KM29U128IT
部品情報  16M x 8 Bit NAND Flash Memory
Download  26 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  SAMSUNG [Samsung semiconductor]
ホームページ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM29U128IT データシート(HTML) 7 Page - Samsung semiconductor

Back Button KM29U128IT Datasheet HTML 3Page - Samsung semiconductor KM29U128IT Datasheet HTML 4Page - Samsung semiconductor KM29U128IT Datasheet HTML 5Page - Samsung semiconductor KM29U128IT Datasheet HTML 6Page - Samsung semiconductor KM29U128IT Datasheet HTML 7Page - Samsung semiconductor KM29U128IT Datasheet HTML 8Page - Samsung semiconductor KM29U128IT Datasheet HTML 9Page - Samsung semiconductor KM29U128IT Datasheet HTML 10Page - Samsung semiconductor KM29U128IT Datasheet HTML 11Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 26 page
background image
KM29U128T, KM29U128IT
FLASH MEMORY
7
MODE SELECTION
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
CLE
ALE
CE
WE
RE
SE
WP
Mode
H
L
L
H
X
X
Read Mode
Command Input
L
H
L
H
X
X
Address Input(3clock)
H
L
L
H
X
H
Write Mode
Command Input
L
H
L
H
X
H
Address Input(3clock)
L
L
L
H
L/H(3)
H
Data Input
L
L
L
H
L/H(3)
X
Sequential Read & Data Output
L
L
L
H
H
L/H(3)
X
During Read(Busy)
X
X
X
X
X
L/H(3)
H
During Program(Busy)
X
X
X
X
X
X
H
During Erase(Busy)
X
X(1)
X
X
X
X
L
Write Protect
X
X
H
X
X
0V/VCC(2) 0V/VCC(2) Stand-by
CAPACITANCE(TA=25
°C, VCC=3.3V, f=1.0MHz)
NOTE : Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
CI/O
VIL=0V
-
10
pF
Input Capacitance
CIN
VIN=0V
-
10
pF
VALID BLOCK
NOTE :
1. The KM29U128 may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these invalid
blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are guaran-
teed though its initial number could be reduced. (Refer to the attached technical notes)
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
NVB
1004
-
1024
Blocks
AC TEST CONDITION
(KM29U128T:TA=0 to 70
°C, KM29U128IT:TA=-40 to 85°C, VCC=2.7V~3.6V unless otherwise noted)
Parameter
Value
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load (3.0V +/-10%)
1 TTL GATE and CL=50pF
Output Load (3.3V +/-10%)
1 TTL GATE and CL=100pF
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
tPROG
-
200
500
µs
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
2
cycles
Spare Array
-
-
3
cycles
Block Erase Time
tBERS
-
2
3
ms


同様の部品番号 - KM29U128IT

メーカー部品番号データシート部品情報
logo
Samsung semiconductor
KM29U64000IT SAMSUNG-KM29U64000IT Datasheet
481Kb / 26P
   8M x 8 Bit NAND Flash Memory
KM29U64000T SAMSUNG-KM29U64000T Datasheet
481Kb / 26P
   8M x 8 Bit NAND Flash Memory
More results

同様の説明 - KM29U128IT

メーカー部品番号データシート部品情報
logo
Samsung semiconductor
K9F2808U0M- SAMSUNG-K9F2808U0M- Datasheet
347Kb / 26P
   16M x 8 Bit NAND Flash Memory
K9F2808U0C SAMSUNG-K9F2808U0C Datasheet
774Kb / 31P
   16M x 8 Bit NAND Flash Memory
K9F2808U0A- SAMSUNG-K9F2808U0A- Datasheet
354Kb / 26P
   16M x 8 Bit NAND Flash Memory
K9F2808Q0B SAMSUNG-K9F2808Q0B Datasheet
304Kb / 29P
   16M x 8 Bit NAND Flash Memory
K9F2808Q0C SAMSUNG-K9F2808Q0C Datasheet
583Kb / 33P
   16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F5608Q0C SAMSUNG-K9F5608Q0C Datasheet
684Kb / 42P
   32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608UOC SAMSUNG-K9F5608UOC Datasheet
680Kb / 41P
   32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608U0B SAMSUNG-K9F5608U0B Datasheet
604Kb / 34P
   32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F6408U0B-TCB0 SAMSUNG-K9F6408U0B-TCB0 Datasheet
416Kb / 27P
   8M x 8 Bit NAND Flash Memory
K9F1208U0M- SAMSUNG-K9F1208U0M- Datasheet
1Mb / 41P
   64M x 8 Bit NAND Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com