データシートサーチシステム |
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TS3A226E データシート(PDF) 3 Page - Texas Instruments |
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TS3A226E データシート(HTML) 3 Page - Texas Instruments |
3 / 11 page MICp SLEEVE RING2 SW1 SW2 Not Recommended for New Designs TS3A226E www.ti.com SCDS340 – MARCH 2013 S1 MUX DETAIL Figure 2. S1 Mux Detail FUNCTIONAL TABLES: INTERNAL SWITCHES EN Accessory Type Accessory Configuration SW1 SW2 FET1 FET2 0 N/A — High Z High Z High Z High Z TIP = Audio Left 1 TRS 3-pole Headphone or Speaker Ring = Audio Right High Z High Z On On Sleeve = Ground TIP = Audio Left Ring1 = Audio Right 1 TRRS 4-pole Headphone On High Z High Z On Ring2 = Ground Sleeve = Microphone TIP = Audio Left Ring1 = Audio Right 1 TRRS 4-pole Headphone High Z On On High Z Ring2 = Microphone Sleeve = Ground 1 N/A — High Z High Z High Z High Z ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VALUE UNIT Voltage range on VDD(2) –0.3 to 5 V VI Voltage range on EN, MICP, RING2, SLEEVE, TIP (2) –0.3 to VDD+0.5 V TA Operating ambient temperature range(3) –40 to 85 °C TJ (MAX) Maximum operating junction temperature 125 °C Tstg Storage temperature range –65 to 150 °C Machine model (JESD 22 A115) 100 V Charge device model (JESD 22 C101) 500 V ESD rating Human body model(JESD 22 A114) 2 kV Contact discharge on RING2, SLEEVE, TIP (IEC 61000-4-2) 8 kV (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to network ground terminal. (3) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package in the application ( θJA), as given by the following equation: TA(max) = TJ(max) – (θJA × PD(max)) Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links :TS3A226E |
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同様の説明 - TS3A226E |
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