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MC100EPT622MNR4G データシート(PDF) 4 Page - ON Semiconductor

部品番号 MC100EPT622MNR4G
部品情報  3.3V LVTTL/LVCMOS to LVPECL Translator
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EPT622MNR4G データシート(HTML) 4 Page - ON Semiconductor

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MC100EPT622
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Table 5. PECL INPUT DC CHARACTERISTICS VCC = 3.3 V, GND= 0.0 V, TA = −40°C to 85°C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
IIH
Input HIGH Current
VIN= 2420 mV
150
mA
IIL
Input LOW Current
VIN= 1490 mV
200
mA
VIH
Input HIGH Voltage
2075
2420
mV
VIL
Input LOW Voltage
1490
1675
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 6. PECL OUTPUT DC CHARACTERISTICS VCC = 3.3 V, GND = 0.0 V (Note 1)
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
85
115
145
90
120
155
95
130
155
mA
VOH
Output High Voltage
(Note 2)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output Low Voltage
(Note 2)
1355
1520
1700
1355
1520
1700
1355
1520
1700
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Input and output parameters vary 1:1 with VCC.
2. All loading with 50 W to VCC−2.0 V.
Table 7. AC CHARACTERISTICS VCC = 3.0 V to 3.8 V (Note 3)
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
fmax
Maximum Frequency
(See Figure 4)
1.0
1.5
1.0
1.5
1.0
1.5
GHz
tPLH,
tPHL
Propagation Delay to Output (Figure 5, Note 4)
D to Q
ENPECL to Q
ENTTL to Q
100
150
300
450
500
450
800
875
800
100
150
300
500
500
500
875
875
800
100
200
300
500
550
500
800
925
800
ps
tJITTER
Random Clock Jitter (RMS)
(See Figure 4)
0.7
3.0
0.7
3.0
0.7
3.0
ps
tr / tf
Output Rise/Fall Times
(20% − 80%)
100
200
450
100
200
250
100
200
300
ps
TSKEW
Duty Cycle Skew (Note 5)
D to Q
Channel 0−7
Channel 8−9
ENPECL to Q
ENTTL to Q
120
200
120
100
375
775
400
275
120
200
120
100
375
775
400
275
120
200
120
100
375
775
400
275
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measured using a 2.4 V source, 50% duty cycle clock source. All loading with 50 W to VCC−2.0 V.
4. 1.5 V to 50% point of the output.
5. Duty cycle skew |tPLH − tPHL| on the specific path.


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