2SAR586D datasheet(2/2 Pages) ISC

部品番号	2SAR586D

部品情報	isc Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor

2SAR586D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

BVCBO

Collector-Base breakdown voltage

IC=-100uA

-80

V

BVCEO

Collector-Emitter breakdown voltage

IC=-1mA

-80

V

BVEBO

Emitter-Base breakdown voltage

IE=-100uA

-6

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -2A; IB= -100mA

-0.32

V

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

-1.0

μ

A

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-1.0

μ

A

hFE

DC Current Gain

IC= -0.5A; VCE= -3V

120

390

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

100

pF

fTNOTE

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -10V,f= 100MHz

200

MHz

NOTE:Pulsed

同様の部品番号 - 2SAR586D

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